| PART |
Description |
Maker |
| ENA1839 |
MMIC, Mixer, IIP3=15dBm, Gc=-0.5dB@450MHz, MCPH6
|
ON Semiconductor
|
| MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| HMC402MS806 HMC402MS8 |
HIGH IP3 GaAs MMIC MIXER, 1.8 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC400MS806 HMC400MS8 |
HIGH IP3 GaAs MMIC MIXER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HWS341 |
GaAs MMIC SPDT High Power Switch
|
ETC
|
| AP640R7-00 |
24-35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch
245 GHz GaAs MMIC High Power SPDT Reflective PIN Switch
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| SSW108 SSW-108 |
DC-4 GHz High Isolation GaAs MMIC SPDT Switch
|
STANFORD[Stanford Microdevices]
|
